The Theoretical Investigation of InGaAs/GaAs Quantum Well Lasers Systems

Sinan Yasar, Ismail Bilican, Murat Oduncuoglu, Sedat Agan, Ihsan Uluer


The host material system for long wavelength novel dilute nitride devices is InGaAs/GaAs quantum well systems. This system is the starting point to study the effect of nitrogen incorporation for 1.3-1.5 µm wavelength emission devices. The material gain and light-current-voltage (L-I-V) characteristics of InGaAs/GaAs Fabry–Parot type quantum well laser structures were theoretically investigated. The effect of temperatures and carrier concentrations on optical gain and L-I-V characteristics of nitrogen-free systems are simulated.


Keywords: Fabry-Parot structure, Opto-electronics devices, Optical gain, Quantum well lasers, Semiconductor laser


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ISSN (online) 2422-8702